ACKNOWLEDGEMENT We first of all thank our Lord Almighty for showering his abundant Grace to give us Knowledge to author this text. This book ‘Semiconductor Devices, Circuits and Applications’ is framed as per the syllabus of Anna University, Chennai for UG Level B.E. Course II Semester (ECE Branch) in Professional Colleges affiliated to Universities in Tamil Nadu. Dr.S.Audithan M.E., M.B.A., Ph.D., D.Sc would like to express his sense of indebtedness to his parents for their heartening and emboldening inputs towards the outcome of this book. I would like to thank our Minister for Higher Education Department Thiru.K.P.Anbalagan, Controller of Examinations, Annamalai University, Dr.RM.Chandrasekaran. I would like to thank our Dean, University college of Engineering, Tindivanam, Dr.P.Vijayakumar. I would like to thank my wife Mrs.S.Geetha & My dear Son A.Jaikiran, who encouraged us in our work and helped us in preparing this book with their constructive criticism. Our Special thanks to Dr.Christo Ananth, Executive Head, ACES Publishers for their help and advice during the editorial and production stages in the preparation of the book. We would also like to express our sincere thanks to Mr.A.Sam Rathinaraj, Manager, Jehovah Printers, Tirunelveli for his constant hard work towards the success of this book. We would like to personally thank Mrs.Ananthi in bringing this book so well within a short span of time
Dr.S.Audithan M.E., M.B.A., Ph.D., D.Sc
EC8252 ELECTRONIC DEVICES
LTPC
3003
OBJECTIVES: To acquaint the students with the construction, theory and operation of the basic electronic devices such as PN junction diode, Bipolar and Field effect Transistors, Power control devices, LED, LCD and other Opto-electronic devices UNIT I SEMICONDUCTOR DIODE
9
PN junction diode, Current equations, Energy Band diagram, Diffusion and drift current densities,forward and reverse bias characteristics, Transition and Diffusion Capacitances, Switching Characteristics, Breakdown in PN Junction Diodes. UNIT II BIPOLAR JUNCTION TRANSISTORS
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NPN -PNP -Operations-Early effect-Current equations – Input and Output characteristics of CE, CB,CC - Hybrid -π model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter Transistor. UNIT III FIELD EFFECT TRANSISTORS
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JFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significanceMOSFET-Characteristics- Threshold voltage -Channel length modulation, DMOSFET, E-MOSFETCharacteristics– Comparison of MOSFET with JFET. UNIT IV SPECIAL SEMICONDUCTOR DEVICES
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Metal-Semiconductor Junction- MESFET, FINFET, PINFET, CNTFET, DUAL GATE MOSFET, Schottky barrier diode-Zener diode-Varactor diode –Tunnel diode- Gallium Arsenide device, LASER diode, LDR. UNIT V POWER DEVICES AND DISPLAY DEVICES
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UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD.